Characterisation of n - in - p pixel sensors for high radiation environments
نویسندگان
چکیده
This work presents the first held at Liverpool University measurements of pixel sensors with n-type readout implant in the p-type bulk before and after irradiation of samples by 24 GeV protons to doses 7 10 and 1.5 10 protons/cm. A comparison is given for two measurement techniques; one based on the FE-I3 readout chip designed for the ATLAS and the other using the Beetle chip developed for the LHCb experiments at CERN. & 2010 Elsevier B.V. All rights reserved.
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تاریخ انتشار 2011